h-BN/graphene/h-BN, with close to 0-degree alignment for both top and bottom surfaces, is found to show correlated insulating behavior at -5、-6、-7 n0 filling（i.e., each moiré unit cell is filled with 5、6、7 holes）.
A templated growth method allows one to have vertically standing 2D materials with 300 nm height on a side wall of xoide. The width of fins in FinFETs can thus be shrinked down to sub-1 nm scale（0.6 nm）.
STO exhibits huge dielectric constat at low temperatures, and graphene very close to an STO substrate can manifest QSHE below 1T、above 100K, because of the screen of Coulomb interaction.
Few-layered GaTe is a 2D semiconductor with large in-plane anisotropic electrical conductivity, which is further gate tunable.
Few-layered Cr2Ge2Te6 is an intrinsic ferromagnetic semiconductor. Below its Curie temperature, a spin-FET is realized.
When an array of superconducting islands is placed on graphene, the ground states can be shifted in between three states: superconductor, metal, and insulator.
A pulsed-growth method is invented to prevent the excessive carbon from precipitation and nucleating as multi-layer patches underneath the monolayer carpet.
By using atomically sharp gate, pn junction in a ballistic 2D electron gas is realized, thus forming a 2D Veselago lens.
A tunnel-contacted MoS2 channel, can be programmed to show ‘pn’-‘Off’-‘np’-‘fullpass’ multi-functional behavior.